Micron is targeting second-half 2027 production ramps for its next DRAM node and G11 NAND while extending its HBM product roadmap through 2030 amid persistent memory supply tightness.
At Micron's technology webinar on Wednesday, Oct. 21, Scott DeBoer, the company's president and chief technology and products officer, outlined the roadmap. He said memory demand and supply are unlikely to converge over the next two years. “We actually do not see a time when it comes into balance,” DeBoer said.
Micron assigned HBM6 to 2030; the earlier milestones are HBM5E (2029), HBM5 (2028), HBM4E (2027) and HBM4 (2026). HBM4E is also the entry point for its custom HBM products.
Micron's 1δ DRAM node is targeted for a second-half 2027 volume ramp, with bit density expected to rise by a mid-20s percentage range. Micron said the node is being developed for HBM5, vertically arranged HBM and vertical memory used for edge inference.
Micron targets G11 NAND for a ramp in the second half of 2027. The design combines wafer-on-wafer bonding with more than 400 layers; its goals are double G9's bit density and 50% higher I/O speed. Micron said the updated design is meant to align NAND with future AI workloads.
Micron's AI system layout puts vertical HBM above processing units and TSV-stacked NAND nearer accelerators. HBM is intended for bandwidth-intensive work, while NAND serves as storage.
Micron's outlook indicates demand will outstrip supply in 2027 and 2028. In its Sept. 30 supply outlook, Chairman and CEO Sanjay Mehrotra said both years would be tighter than 2026.
Micron's Q3 filing connected some of the supply strain to AI data-center growth, which is lifting memory and storage needs faster than Micron and the broader industry can add capacity. The filing said HBM production uses more wafer capacity and clean-room space than conventional DRAM when made on the same technology generation.
