Vertiv Holdings Co. said Nov. 4 it had signed a three-year strategic agreement with Infineon Technologies AG to support access to power semiconductors as AI-related infrastructure changes data-center power requirements.
The agreement applies to silicon and silicon carbide power semiconductors used in Vertiv’s worldwide power products, including next-generation systems at 800 volts direct current (VDC). Vertiv connects those systems with changing electricity demands from AI infrastructure. The company said the chips support electricity conversion and control in its power equipment.
Vertiv said it expects the deal to help maintain component availability as it expands production and give it a clearer view of semiconductor supply during the three-year term. The company described the agreement as part of its broader multi-supplier strategy and said it is intended to support reliable, on-time deliveries.
Infineon components are manufactured globally and will be used in Vertiv products for data centers, communication networks, and commercial and industrial applications, Vertiv said. The companies also plan to coordinate their technology and product roadmaps.
Vertiv said it selected Infineon for its insulated-gate bipolar transistor (IGBT), silicon and silicon carbide expertise, as well as its manufacturing capacity and quality record. Frieda He, Vertiv’s chief procurement officer, said, “The rapid evolution of AI is reshaping the power requirements of the data center.”
Vertiv said the companies have worked together for decades. It cited demand for critical digital infrastructure and shifting AI-related power requirements as reasons supply continuity matters.
Vertiv did not disclose the agreement’s value, component volumes, minimum purchase commitments, product allocations or a specific delivery schedule.
