Dublin, March 10, 2016 -- Research and Markets (http://www.researchandmarkets.com/research/znfwsl/gan_devices_for) has announced the addition of the "GaN Devices for Power Electronics Patent Investigation" report to their offering.
This report forecasts that the global GaN power semiconductor devices market will grow at an estimated 93% CAGR during the 2016-2020 period.
More than 1,960 patented inventions related to GaN power electronics have been published worldwide up to April 2015. The first patents were published in the mid-1990s by silicon power companies (Furukawa Electric, International Rectifier, Infineon). But the take-off of patenting activity was really observed ten years later with a first wave of patent publications over the 2005-2009 period, mainly due to American companies (International Rectifier, Power Integrations) and Japanese companies (Panasonic, Rohm, Furukawa Electric, Sumitomo Electric, Toshiba, Toyota). A second wave of patent publications started in 2010, mainly originating from Mitsubishi Electric, Fujitsu, Transphorm, Avogy and Infineon, while the first commercial products, collaborations, mergers and acquisitions emerged. Quite recently LED pure-players like Seoul Semiconductor have entered the Power GaN IP arena.
Key Features Of The Report:
- IP trends including time evolution and countries of filing
- Power GaN market data and forecasts
- Ranking of main patent applicants
- Joint developments and IP collaboration network of main patent applicants
- Key patents and granted patents near expiration
- Relative strength of main companies' IP portfolios
- Matrix showing patent applicants and patented technologies
- Power GaN IP profiles of 9 major companies, with key patents, technological issues, litigation, licenses, partnerships, IP strength, IP strategy and latest market news
- Excel database with all patents analyzed in the report, including technology segmentation
Companies Mentioned:
- Alpha & Omega Semiconductor
- Arkansas Power
- Avogy
- Cree
- Daikin Industries
- Delta
- Dowa Electronics Materials
- EpiGaN
- ExaGaN
- Fairchild
- Freescale
- Fuji Electric
- Fujitsu
- Sharp
- Sumitomo Electric
- TSMC
- Texas
- Toshiba
- Toyota
- Translucent
- Transphorm
- Triquint
- VisIC
- Vishay
Report Structure:
1. The authors
2. Scope of the report
3. Key features of the report
4. Objectives of the report
5. Methodology
6. Patent search strategy
7. Patent segmentation
8. Summary
9. Introduction
10. Noteworthy news
11. IP overview
12. Patent segmentation
13. Focus on key technology segments
14. Focus on key power GaN IP players
15. Power GaN IP profile of key players 169
16. Conclusions
For more information visit http://www.researchandmarkets.com/research/znfwsl/gan_devices_for
CONTACT: Research and Markets
Laura Wood, Senior Manager
[email protected]
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Sector: Semiconductor


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