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Samsung Electronics Co. will release a new generation of memory chips in late 2021 that could double speeds and keep pace with the growth of data centers and artificial intelligence requirements.
The chipmaker's 512GB DDR5 will be twice as fast as the current DDR4, reduces leakage, and uses 13 percent less power.
The DDR5 memory modules are based on a High-K Metal Gate fabrication process traditionally used in logic chips.
The chip industry has been expecting the adoption of a new memory standard with the arrival of Intel Corp.’s Xeon Scalable processors, codenamed Sapphire Rapids.
Other than its partnership with the two major CPU suppliers, Intel and Advanced Micro Devices Inc., Samsung provided samples of its new memory to developers of data center platforms.
With DDR5 chips expected to be about 20 percent larger than DDR4 parts, there is increased pressure on semiconductor supply chains.
Samsung intends to gradually evolve extreme ultraviolet lithography use.
